List of Publications of Quantum Device Group since 2008
School of Electrical and Computer Engineering at OU in collaboration with researchers in Department of Physics of OU, Sandia, IQE, JPL, NRCC, AFRL, University of Maryland, Zhejiang University, Nanjing University, Institute of Semiconductors, and University of Waterloo.
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Improving device performance of type-II interband cascade lasers with room temperature emission wavelengths below 3 μm
Yixuan Shen ; Rui Q. Yang, Tetsuya D. Mishima ; Michael B. Santos ; Xiaojun Wang
We report the demonstration of hybrid-cladding interband cascade lasers (ICLs) for a room temperature emission wavelength range from 2.68 to 2.9 μm. Their threshold current density and threshold input power density are substantially lower than previously reported values from superlattice-cladding ICLs at similar wavelengths. These ICLs were able to operate in pulsed modes at temperatures close to 400 K. At 300 K, the threshold current density was as low as 191 A/cm2 with a threshold input power density of 693 W/cm2. Narrow ridge devices lased in a continuous wave (cw) mode at room temperature and above with threshold current density and output power that are improved compared to previous ICLs at similar wavelengths. Comparative studies of devices with different local material qualities from the same wafer and different wafers revealed a certain correlation between Shockley–Read–Hall recombination and threshold current density, which shed light on understanding the degradation of device performance with the shortening of the lasing wavelength of type-II ICLs. Additionally, negative differential conductance features were observed under reverse bias voltage, which may provide an interesting and potentially useful means to examine the material and fabrication qualities of devices with some extended applications.
DOI: 10.1063/5.0286553
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Room temperature interband cascade lasers near 7.7 µm and dependence on structural quality
Yixuan Shen, Rui Q Yang, John D Steward, Samuel D Hawkins and Aaron J Muhowski
Interband cascade lasers (ICLs) are becoming desirable mid-infrared semiconductor laser sources particularly in the 3–6 µm wavelength range due to their low power consumption. In this work, we report the demonstration of room temperature (RT) ICLs based on hybrid-cladding layers and a modified type-II quantum well active region with an emission wavelength near 7.7 µm, the longest ever reported for RT ICLs. By investigating two ICL wafers with different structural qualities and strains, we show their correlation and importance to the corresponding device performance in terms of their maximum operating temperature, threshold current density and threshold voltage, as well as their operational robustness at high currents. This comparative study also reveals connection between different cladding configurations in terms of electrical resistance and voltage drop across them. Furthermore, by comparing with previous reported ICLs at similar wavelengths, but with different designs, we show and discuss how significantly the doping levels in ICLs could affect free-carrier absorption related device performance in terms of external quantum efficiency, maximum operating temperature and threshold current density. Our experimental results and analyses provide insights and guidance for further development and optimization of ICLs in the long wavelength region.
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High Performance Interband Cascade Lasers With Room Temperature Lasing Wavelengths Near 3.3 μm
Yixuan Shen ; Rui Q. Yang, Tetsuya D. Mishima ; Michael B. Santos ; Xiaojun Wang
We report significant advancements of interband cascade lasers (ICLs) with hybrid cladding layers. These 6-stage hybrid-cladding ICLs were able to lase in pulsed modes at temperatures up to 421 K, the highest ever reported among ICLs. The lasing wavelength was near 3.3 μ m at 300 K with a pulsed threshold current density of 114 A/cm2, the lowest for ICLs with similar wavelengths. Also, they achieved a high voltage efficiency of ~82% and a record-low threshold input power density of 312 W/cm2 at 300 K. Facet-uncoated narrow-ridge ICLs operated in continuous wave (CW) mode at temperatures up to 364 K (91°C), which is more than 20 K higher than the previous record for epi-up mounted ICLs. The obtained CW threshold current density of 205 A/cm2 at 300 K is similar to the previous record (~200 A/cm2 at 300 K) achieved by a superlattice-cladding 10-stage ICL with emission near the long-held optimal wavelength of ICLs at 3.6 μ m. Also, these ICLs at 300 K delivered CW output power of 25 mW/facet at 160 mA with substantially improved external quantum efficiency over previous ICLs at similar wavelengths.
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Continuous wave GaSb based ICL with hybrid cladding layers operated at RT and Above
Yixuan Shen ; Rui Q. Yang, Tetsuya D. Mishima ; Michael B. Santos ; Xiaojun Wang
We report the preliminary demonstration of continuous wave (cw) GaSb-based interband cascade lasers (ICLs) with hybrid cladding layers at high temperatures up to 80 °C near a wavelength of 3.72 μm. These ICLs have narrow-ridge widths of 7–11 μm with improved thermal dissipation compared to broad-area devices. They delivered a cw output power of more than 30 mW/facet at 20 °C and had a cw threshold current density of 270 A/cm2 with a voltage efficiency of 78% at 300 K. The obtained voltage efficiency of 78% is the highest ever reported among cw GaSb-based ICLs at room temperature, indicating an advantage of efficient carrier transport in the ICL with the hybrid cladding layers. The dependence of device performance on the narrow-ridge width and cavity length was investigated. The results suggested ways to further improve future devices.
DOI: 10.1063/5.0221586
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Continuous wave interband cascade lasers near 13 μm
Yixuan Shen, Rui Q. Yang, Samuel D. Hawkins, Aaron J. Muhowski
We report the demonstration of continuous-wave interband cascade lasers (ICLs) near 13 μm. The attained lasing wavelength of 13.2 μm at 92 K stands as the longest cw emission wavelength ever reported for III-V interband lasers. This achievement is attributed to the adoption of an innovative quantum well (QW) active region comprising strained InAs0.5P0.5 layers in contrast to the commonly used “W” QW active region, showing the potential of the modified QW active region with InAsP layers in improving device performance and extending wave- length coverage of ICLs.
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Single-mode interband cascade laser based on V-coupled cavity with 210 nm wavelength tuning range near 3 μm
Jingli Gong, Zhanyi Wang, Jian-Jun He, Lu Li, Rui Q. Yang, and James A. Gupta
By enhancing the coupling coefficient and using a type-I ICL wafer, single-mode ICLs were demonstrated based on V-coupled cavity with significantly extended tuning range and with a side mode suppression ratio (SMSR) exceeding 35 dB in continuous wave operation near 3 μm. A V-coupled cavity ICL exhibited a wavelength tuning up to 67 nm at a fixed temperature, and the total tuning range exceeds 210 nm when the heat sink temperature is adjusted from 80 to 180 K. The realization of single-mode in such a wide temperature range with a tuning range exceeding 210 nm verified the advantage of V-coupled cavity ICLs for effective detection of multiple gas species. Another V-coupled cavity ICL is tuned over 120 nm from 2997.56 nm to 3117.50 nm with the heat-sink temperature varied from 210 K to 240 K, over 100 K higher than the previously reported maximum operating temperature for V-coupled cavity ICLs.
DOI: 10.1364/OE.504209
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Improved Device Performance of Interband Cascade Lasers with Hybrid Cladding Layers Operating in the 3-4 μm wavelength region
Yixuan Shen, Jeremy A. Massengale, Rui Q. Yang, Tetsuya D. Mishima, Michael B. Santos
By focusing on a hybrid cladding approach, we demonstrate substantially improved device performance of ICLs compared to earlier reported ICLs of a similar design in the 3–4 µm wavelength region. Including a Jth for broad-area devices as low as 134 A/cm2 at 300 K and a peak voltage efficiency of 80%. Moreover, we have demonstrated CW operation of a BA device up to 278 K, the highest CW operating temperature among epi-side up mounted broad-area type-II ICLs, implying improved thermal dissipation with the hybrid cladding approach.
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Low threshold long wavelength Interband Cascade Lasers with high voltage efficiencies
Jeremy A. Massengale, Yixuan Shen, Rui Q. Yang, Samuel D. Hawkins, Aaron J. Muhowski
We report on the substantial advancement of long wavelength InAs-based interband cascade lasers (ICLs) utilizing advanced waveguides formed from hybrid cladding layers and targeting the 10-12 µm wavelength region. Modifications in the hole injector have improved carrier transport in these ICLs, resulting in significantly reduced threshold voltages as low as 3.62 V at 80 K.
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Interband cascade lasers with advanced waveguide operating in the 3 to 4 µm wavelength region
Jeremy A. Massengale, Yixuan Shen, Rui Q. Yang, Tetsuya D. Mishima, Michael B. Santos
Two ICLs (Y086L and Y087L) follow the design of Y082L series with hybrid cladding layers are reported. They have room temperature Jth as low as 148 A/cm2 and high voltage efficiencies of 69%. The highest CW operating temperature T = 260K.
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Carrier Concentration-Dependent Optical Properties of Narrow Gap Semiconductors
Yixuan Shen, R. Yang, M. Santos, “Carrier Concentration-Dependent Optical Properties of Narrow Gap Semiconductors”, MIOMD-TuP-19, Poster session presented at the 16th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD XVI), Norman, OK, United States.
