PUBLICATIONS

List of Publications of Quantum Device Group since 2008

School of Electrical and Computer Engineering at OU in collaboration with researchers in Department of Physics of OU, Sandia, IQE, JPL, NRCC, AFRL, University of Maryland, Zhejiang University, Nanjing University, Institute of Semiconductors, and University of Waterloo.

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  • Interband cascade infrared photodetectors with InAs/GaSb superlattice absorbers

    R. T. Hinkey, H. Lotfi, L. Li, H. Ye, L. Lei, R. Q. Yang, J. C. Keay, T. D. Mishima, M. B. Johnson, and M. B. Santos, “Interband cascade infrared photodetectors with InAs/GaSb superlattice absorbers”, Paper 8868-3 at Infrared Sensors, Devices, and Applications III, SPIE Optics + Photonics 2013, San Diego, CA, 25 – 29 August 2013 (in Proc. SPIE 8868, paper 886805).

  • Comparison of ultimate limits of interband cascade infrared photodetectors and single-absorber detectors

    R. T. Hinkey and R. Q. Yang, “Comparison of ultimate limits of interband cascade infrared photodetectors and single-absorber detectors”, Paper 8868-2 at Infrared Sensors, Devices, and Applications III, SPIE Optics + Photonics 2013, San Diego, CA, 25 – 29 August 2013 (in Proc. SPIE 8868, paper 886804).

  • Quantum Engineered Interband Cascade Structures for Optoelectronic Devices

    R. Q. Yang, “Quantum Engineered Interband Cascade Structures for Optoelectronic Devices” (invited), The International Conference on Nanomaterials (ICN 2013), London, Canada, Aug. 12-16, 2013.

  • Interband cascade photovoltaic devices operating at room temperature and above with a bandgap of ~0.23 eV

    H. Ye, H. Lotfi, L. Li, R. T. Hinkey, R. Q. Yang, L. Lei, J. C. Keay, M. B. Johnson, and M. B. Santos, “Interband cascade photovoltaic devices operating at room temperature and above with a bandgap of ~0.23 eV”, The 16th International Conference on Narrow Gap Semiconductors, Hangzhou, China, Aug. 2-5, 2013.

  • Mid-infrared Interband Cascade Lasers and Related Optoelectronic Devices

    M. B. Santos, T. D. Mishima, J.C. Keay, M.B. Johnson, L. Li, R.T. Hinkey, H. Ye, Y. Jiang, H. Lotfi, L. Zhao, L. Lei, R. Q. Yang, “Mid-infrared Interband Cascade Lasers and Related Optoelectronic Devices” (invited), the 4th International Workshop on Bismuth-Containing Semiconductors, Fayetteville, Arkansas, July 14-17, 2013.

  • Interband Cascade Thermophotovoltaic Devices with Type-II Superlattice Absorbers of ~0.4 eV Bandgap

    R. T. Hinkey, H. Lotfi, L. Li, R. Q. Yang, J. F. Klem, J. C. Keay, M. B. Johnson, “Interband Cascade Thermophotovoltaic Devices with Type-II Superlattice Absorbers of ~0.4 eV Bandgap”, The 39th IEEE Photovoltaic Specialists Conference, Tampa, FL, June 16-21, 2013.

  • Development of InAs-based Interband Cascade Lasers

    M. B. Santos, T. D. Mishima, J. C. Keay, M. B. Johnson, L. Li, L.Zhao, Y. Jiang, Z. Tian, H. Ye, R. T. Hinkey, C. Niu, and R Q. Yang, “Development of InAs-based Interband Cascade Lasers” (invited), The 40th International Symposium on Compound Semiconductors, Kobe, Japan, 19-23 May, 2013.

  • Interband Cascade Lasers and Relevant Devices based on Heterostructures

    R. Q. Yang, “Interband Cascade Lasers and Relevant Devices based on Heterostructures”, at the Workshop on Development of Man Made Electronic Materials and Devices: Past and Future, UNC Charlotte, May 5-7, 2013.

  • Recent progress in development of InAs-based Interband Cascade Lasers

    R. Q. Yang, L. Li, L. Zhao, Y. Jiang, Z. Tian, H. Ye, R. T. Hinkey, C. Niu, T. D. Mishima, M. B. Santos, J. C. Keay, M. B. Johnson, K. Mansour, “Recent progress in development of InAs-based Interband Cascade Lasers” (invited), at Novel In-Plane Semiconductor Lasers XII of Photonics West 2013, San Francisco, CA Feb. 2-7, 2013 (in Proc. SPIE 8640, paper 86400Q).

  • InAs-based Interband Cascade Lasers

    R. Q. Yang, et al. “InAs-based Interband Cascade Lasers” (invited), at 2nd International Workshop on Opportunities and Challenges in Mid-Infrared Laser-based Gas Sensing, Wroclaw, Poland, October 18-20, 2012.