List of Publications of Quantum Device Group since 2008
School of Electrical and Computer Engineering at OU in collaboration with researchers in Department of Physics of OU, Sandia, IQE, JPL, NRCC, AFRL, University of Maryland, Zhejiang University, Nanjing University, Institute of Semiconductors, and University of Waterloo.
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Interband Cascade Infrared Photodetectors with Very Long Cutoff Wavelengths
H. Lotfi, L. Li, H. Ye, R. T. Hinkey, L. Lei, R. Q. Yang, J. C. Keay, T.D. Mishima, M.B. Santos, and M. B. Johnson, “Interband Cascade Infrared Photodetectors with Very Long Cutoff Wavelengths,” Quantum Structured Infrared Photodetector International Conference (QSIP 2014), Santa Fe, NM, June 29-July 3, 2014.
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Direct Observation of Non-uniform Electric Field in the Active Regions of an Interband Cascade Laser
R. S. Dhar, C. Xu, D. Ban, L. Li, H, Ye, R, Q. Yang, M B. Johnson, T. D. Mishima; M. B. Santos, “Direct Observation of Non-uniform Electric Field in the Active Regions of an Interband Cascade Laser”, paper STh3G.3. at The Conference on Lasers and Electro-Optics (CLEO) and the Quantum Electronics and Laser Science Conference (QELS), San Jose, CA, June 8-13, 2014.
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Multi-Stage Photovoltaic Devices with a Cutoff Wavelength of ~3 µm
H. Lotfi, R. T. Hinkey, L. Li, R. Q. Yang, J F. Klem, J. C. Keay, and M. B. Johnson, “Multi-Stage Photovoltaic Devices with a Cutoff Wavelength of ~3 µm,” The 40th IEEE Photovoltaic Specialists Conference, Denver, CO, June 8-13, 2014.
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Quantum-engineered interband cascade photovoltaic devices
Rui Q. Yang, H. Lotfi, L. Li, R. T. Hinkey, H. Ye, J. F. Klem, L. Lei; T. D. Mishima, J. C. Keay, M. B. Santos, M. B. Johnson, “Quantum-engineered interband cascade photovoltaic devices” (invited), Quantum Sensing and Nanophotonic Devices XI at Photonics West, San Francisco, CA, Feb. 2-6, 2014 (in Proc. SPIE. 8993, 899310) doi: 10.1117/12.2040746.
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Interband cascade infrared photodetectors with InAs/GaSb superlattice absorbers
R. T. Hinkey, H. Lotfi, L. Li, H. Ye, L. Lei, R. Q. Yang, J. C. Keay, T. D. Mishima, M. B. Johnson, and M. B. Santos, “Interband cascade infrared photodetectors with InAs/GaSb superlattice absorbers”, Paper 8868-3 at Infrared Sensors, Devices, and Applications III, SPIE Optics + Photonics 2013, San Diego, CA, 25 – 29 August 2013 (in Proc. SPIE 8868, paper 886805).
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Comparison of ultimate limits of interband cascade infrared photodetectors and single-absorber detectors
R. T. Hinkey and R. Q. Yang, “Comparison of ultimate limits of interband cascade infrared photodetectors and single-absorber detectors”, Paper 8868-2 at Infrared Sensors, Devices, and Applications III, SPIE Optics + Photonics 2013, San Diego, CA, 25 – 29 August 2013 (in Proc. SPIE 8868, paper 886804).
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Quantum Engineered Interband Cascade Structures for Optoelectronic Devices
R. Q. Yang, “Quantum Engineered Interband Cascade Structures for Optoelectronic Devices” (invited), The International Conference on Nanomaterials (ICN 2013), London, Canada, Aug. 12-16, 2013.
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Interband cascade photovoltaic devices operating at room temperature and above with a bandgap of ~0.23 eV
H. Ye, H. Lotfi, L. Li, R. T. Hinkey, R. Q. Yang, L. Lei, J. C. Keay, M. B. Johnson, and M. B. Santos, “Interband cascade photovoltaic devices operating at room temperature and above with a bandgap of ~0.23 eV”, The 16th International Conference on Narrow Gap Semiconductors, Hangzhou, China, Aug. 2-5, 2013.
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Mid-infrared Interband Cascade Lasers and Related Optoelectronic Devices
M. B. Santos, T. D. Mishima, J.C. Keay, M.B. Johnson, L. Li, R.T. Hinkey, H. Ye, Y. Jiang, H. Lotfi, L. Zhao, L. Lei, R. Q. Yang, “Mid-infrared Interband Cascade Lasers and Related Optoelectronic Devices” (invited), the 4th International Workshop on Bismuth-Containing Semiconductors, Fayetteville, Arkansas, July 14-17, 2013.
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Interband Cascade Thermophotovoltaic Devices with Type-II Superlattice Absorbers of ~0.4 eV Bandgap
R. T. Hinkey, H. Lotfi, L. Li, R. Q. Yang, J. F. Klem, J. C. Keay, M. B. Johnson, “Interband Cascade Thermophotovoltaic Devices with Type-II Superlattice Absorbers of ~0.4 eV Bandgap”, The 39th IEEE Photovoltaic Specialists Conference, Tampa, FL, June 16-21, 2013.